Accurate expressions of the optical coefficients, given in n(p)-type degenerate GaAs-crystals, due to the impurity-size effect, and obtained by an improved Forouhi-Bloomer parameterization model (FB-PM)
DOI: 10.54647/physics140552 93 Downloads 3361 Views
Author(s)
Abstract
In the n(p)-type degenerate GaAs-crystals, at low temperature T and high d(a)-density N, our expression for the static dielectric constant, \varepsilon\left(r_{d\left(a\right)}\right), expressed as a function of the donor (acceptor) radius, r_{d\left(a\right)}, and determined by using an effective Bohr model, as that investigated in [1,2], suggests that, for an increasing r_{d\left(a\right)}, due to such the impurity size effect, \varepsilon\left(r_{d\left(a\right)}\right) decreases, affecting strongly the critical d(a)-density in the metal-insulator transition (MIT), N_{CDn(CDp)}(r_{d(a)}), determined by Eq. (3), and its values are reported in Table 1, and also our accurate expressions for optical coefficients, obtained in Equations (24, 25, 28, 29), and their numerical results are given in Tables 2-6. Furthermore, one notes that, as observed in Table 3c, our obtained results of those optical coefficients are found to be more accurate than the corresponding ones, obtained from the FB-PM [11], suggesting thus that the present model, used here to study the optical properties of the n(p)-type degenerate GaAs-crystals, is a good improved FB-PM.
Keywords
Effects of the impurity-size and heavy doping; effective autocorrelation function for potential fluctuations; optical coefficients; critical photon energy
Cite this paper
H. Van Cong,
Accurate expressions of the optical coefficients, given in n(p)-type degenerate GaAs-crystals, due to the impurity-size effect, and obtained by an improved Forouhi-Bloomer parameterization model (FB-PM)
, SCIREA Journal of Physics.
Volume 8, Issue 3, June 2023 | PP. 198-222.
10.54647/physics140552
References
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